Burhan K. Saifaddin on Muck Rack

Burhan K. Saifaddin

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Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

|
By Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza
| AIP Publishing
The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have been systematically studied to minimize the resistivity of AlGaN:Si. We observed a strong anticorrelation between AlGaN:Si conductivity and growth temperature, suggesting increased silicon donor compensation at elevated temperatures.
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