Embedded Science

By Stephen A. Vicinanza EmbeddedScience.org | October 13, 2026 Opinion and Technical Commentary Artificial intelligence is one of the most powerful technological developments of our time. It is also one of the most misleadingly named. We have built computational systems capable of producing remarkably convincing language, generating software, analyzing documents, recognizing patterns, and answering questions across an extraordinary range of subjects.

AI INDEPENDENCE | EDITORIAL DISCLOSURE These articles examine neural networks, neural processing units (NPUs), machine learning, edge computing and TinyML. My perspective reflects years of technical writing and editorial coverage, as well as firsthand conversations with engineers involved in developing neural-network technologies, AI processors and embedded systems.

Imec is moving gallium-nitride power semiconductor development onto 300-mm wafers, opening a potential path toward lower manufacturing costs and more advanced GaN devices using infrastructure developed for the silicon semiconductor industry. The research organization launched its 300-mm GaN program with AIXTRON, GlobalFoundries, KLA, Synopsys and Veeco as initial partners.

Renesas Electronics’ TP65B110HRU uses a single GaN-based device to conduct current and block voltage in both directions, potentially eliminating pairs of conventional back-to-back power transistors used in many converters.

Navitas Semiconductor announced on September 28, 2026, that the U.S. Army selected the company for the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) prototype program. The effort focuses on developing and validating a domestic manufacturing process for ultra-high-voltage silicon-carbide power devices, including 10-kV insulated-gate bipolar transistors (IGBTs) and associated PiN diodes. The selection is a development award, not an announcement that commercial 10-kV IGBTs are available.

GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN STMicroelectronics is developing next-generation AI data-center infrastructure around a combination of silicon, silicon carbide and gallium nitride rather than betting on a single semiconductor technology.

Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program Qorvo has achieved more than a 400% increase in X-band GaN transistor RF power density through research funded by DARPA’s THREADS program. Rather than simply increasing transistor output, the project attacks one of high-power RF electronics’ fundamental limitations: heat generated within the transistor itself.

Artificial intelligence is becoming more than a productivity tool. Increasingly, people are turning to AI systems for advice about money, careers, technology, relationships, health, and other personal problems. New research highlighted by MIT Sloan School of Management suggests there is another important reason people may choose an AI adviser over a human one: AI can feel less judgmental. Researchers found that people generally consider human advisers more competent.

Stanford and SLAC researchers developed a highly precise method for measuring how electrical energy is lost as heat inside a model electronic system. By changing the way voltage was applied, the researchers reduced wasted energy by more than 60 percent compared with a conventional voltage pattern.

Are Chatbots Actually Correct? The Complicated Question of AI Accuracy and AI-Generated Information Artificial intelligence chatbots have quickly moved from technological novelty to everyday adviser. People ask them about finances, careers, technology, relationships, health concerns, business decisions and countless other subjects. In many cases, users are willing to disclose information to an AI system that they might hesitate to tell another person.