Power Systems Design

PSDwebinar: Driving the Software Defined Vehicle: Zonal Architecture, Ethernet and Intelligent Power Distribution The automotive industry is undergoing a fundamental shift from function specific, hardware centric designs to software-defined vehicles (DVs) built on centralized compute zonal architectures, and new concept in vehicle networking.

Digital power has been a growing trend in power supplies for well over a decade, and its benefits are undeniable. For example, digital power is highly precise, being easily controlled and configured by software, which leads to better dynamic performance and efficiency. Digital power is also more robust, because of the integrated diagnostics. However, up until now, these benefits were mostly restricted to larger power supplies as they are more noise resistant.

Rohm was one of the original pioneers of SiC technology. The company keeps the entire production process in-house, from from raw powder to module packaging, and has been mass-producing SiC devices since 2010. It was also the company to first introduce trench-type SiC MOSFETs, utilizing an original double trench structure to solve oxide film damage issues and improve efficiency. This year, it launched its 5th Generation SiC devices at PCIM in Nuremberg.

TDK Corporation introduces the E13 EM series (ordering code: B8280*F*). These IGBT/FET gate drive transformers are designed for automotive 500-V battery systems, enabling reliable isolation in traction inverters and compact DC-DC converters. By meeting stringent creepage and clearance requirements, this new series supports safe and efficient power conversion in xEV platforms, where robust insulation and space-efficient design are crucial to next-generation electrified mobility.

Bourns announced the Model CDDFN2‑T3V3SC and CDDFN2‑T5V0SC Surface‑Mount Transient Voltage Suppressor (TVS) Diodes, designed to provide ESD, EFT, and surge protection in DFN‑2 (0402) footprints for space‑constrained electronic designs. The bidirectional devices support IEC 61000‑4‑2, ‑4‑4, and ‑4‑5 protection requirements while maintaining working peak reverse voltages of 3.3 V and 5.0 V, respectively.

Bath researchers Dr Neil Hindley and Professor Corwin Wright, from the University of Bath’s Centre for Climate Adaptation & Environment Research (CAER), have joined the science team behind NASA’s next-generation satellite mission. The STRIVE mission, which stands for Stratosphere Troposphere Response using Infrared Vertically-resolved light Explorer, will take high-resolution, daily measurements of global temperature, aerosol pollution and ozone levels throughout the Earth’s atmosphere.

Modern medical devices are increasingly sophisticated, supporting everything from minimally invasive surgical procedures to advanced diagnostic imaging and continuous patient monitoring. As healthcare providers rely more on these technologies for accurate diagnoses and treatment, reliability has never been more important. Connectors play a critical role in maintaining the flow of power, signals and data throughout these devices.

Infineon Technologies AG opened the Smart Power Fab in Dresden several months ahead of schedule. The new plant, with an investment volume of five billion euros, is the largest single investment in Infineon's history and one of the largest investment projects in Germany, creating 1,000 new, direct jobs. The new fab doubles Infineon's manufacturing capacities at the Dresden site, thus creating the world's largest factory for intelligent power semiconductors and analog / mixed-signal technologies.

Infineon Technologies AG today completed the acquisition of the non-optical analog/mixed-signal sensor portfolio from ams OSRAM Group. The transaction, announced in February 2026, has received all necessary regulatory approvals. With the acquisition, Infineon strengthens its position as a leader in sensors for industrial and automotive applications through a complementary portfolio and expands its product range in medical applications.

Bourns announced the Model CDDFN2‑T3V3SC and CDDFN2‑T5V0SC Surface‑Mount Transient Voltage Suppressor (TVS) Diodes, designed to provide ESD, EFT, and surge protection in DFN‑2 (0402) footprints for space‑constrained electronic designs. The bidirectional devices support IEC 61000‑4‑2, ‑4‑4, and ‑4‑5 protection requirements while maintaining working peak reverse voltages of 3.3 V and 5.0 V, respectively.