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No Access Appl. Phys. Lett. 121, 064001 (2022); https://doi.org/10.1063/5.0104950 A merged-element transmon (MET) device based on silicon (Si) fins is proposed, and the first steps to form such a “FinMET” are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on parallel sidewall surfaces.
Abstract We have measured the Seebeck and anomalous Nernst coefficients and corresponding transverse and longitudinal thermoelectric conductivities from 2 to 400 K in thin film (thickness t∼10 nm) Co2MnAlxSi1−x (0≤x≤1) and Co2FeAl grown by molecular beam epitaxy (MBE). A large (−14Am−1K−1 at 300 K) anomalous component of the transverse thermoelectric conductivity is observed in Co2MnAl, especially as contrasted to Co2MnSi (0.28 Am−1K−1 at 300 K).
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