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Abstract Two-dimensional optical modulators often suffer from low efficiency due to defect-induced losses and light–matter interaction strength. Here we show that edge defects in solution-processed WSe2 nanosheets, arising from metallic 1 T domains at the edges and semiconducting 2H interiors, can be dynamically saturated through carrier trap filling.
Abstract Efficient data transfer between memory and photonic components is crucial for a wide range of applications. However, this necessity brings forth energy-efficient data movement challenges associated with the memory wall, underscoring the demand for a fast and low-energy electro-optic photonic memory solution.
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