Data Availability Statement The data that support the findings of this study are available from the corresponding author upon reasonable request. References 1, , , et al., “A 140- and 220-GHz Dual-Band Amplifier in 130-nm SiGe BiCMOS Process,” IEEE Transactions on Terahertz Science and Technology 14, no. 5 (2024): 768–773. 2, , , and , “A Broadband 110-170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm Psat in 130-nm SiGE,” IEEE Microwave and Wireless Technology Letters 31, no. 1 (2021): 56–59.
