1 Introduction The hexagonal 4H-silicon carbide (4H-SiC) single crystals have become a key semiconductor material for high-power electronic components due to their excellent physical properties [1-5], such as wide bandgap, high thermal conductivity, and excellent chemical stability. However, their extremely high hardness and brittleness make machining (such as grinding and polishing) extremely difficult, and subsurface damage and cracks are easily induced during processing.
