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Enhanced performance of near-infrared photodetectors based on InGaAs nanowires enabled by a two-step growth method† Heng Zhang,ab Wei Wang,a SenPo Yip,abc Dapan Li,a Fangzhou Li,a Changyong Lan, d Fei Wang,ab Chuntai Liue and Johnny C.
Abstract Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition.
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