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Articles by Dingbo Chen
An Ultra-Low-Loss Waveguide Based on BIC Used for an On-Chip Integrated Optical Gyroscope
Open AccessArticle by Zhenkun Yuan 1,2, Jian Chen 2, Dingbo Chen 2, Shuolong Zhu 1, Junbo Yang 2,* and Zhenrong Zhang 1,* 1 Guangxi Key Laboratory of Multimedia Communications and Network Technology, School of Computer, Electronic and Information, Guangxi University, Nanning 530004, China 2 College of Sciences, National University of Defense Technology, Changsha 410073, China * Authors to whom correspondence should be addressed.
The Densification Characteristics of Polished Fused Silica Glass and Its Scattering Characteristics
Open AccessCommunication by Xiaowei Jiang 1,2, Dingbo Chen 1,2, Yuchuan Quan 1,3, Xingwu Long 1,2, Suyong Wu 1,2 and Zhongqi Tan 1,2,* 1 College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China 2 Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China 3 Hua Guan Technology Co., Ltd., Changsha 410073, China * Author to whom correspondence should be addressed.
Tunable multilayer-graphene-based broadband metamaterial selective absorber
Abstract We propose a tunable multilayer-graphene-based broadband metamaterial selective absorber using the finite-difference time domain. The simulation results reveal that the absorption spectra of the proposed metamaterial with the nano-cylinder and 30-layer graphene show high absorption (88.3%) in the range of 250–2300 nm, which covers the entire solar spectrum.
Author Correction: Near-infrared tunable metalens based on phase change material Ge2Sb2Te5
Correction to: Scientific Reports https://doi.org/10.1038/s41598-019-41859-x, published online 29 March 2019 The original version of this Article contained an error in the title and Introduction of the paper where “Ge2Sb2Te5” was incorrectly given as “Ge2Se2Te5”.
All-optical switch and logic gates based on hybrid silicon-Ge2Sb2Te5 metasurfaces
Abstract We numerically propose a hybrid metasurface (MS) to realize all-optical switch and logic gates in the shortwave infrared (SWIR) band. Such MS consists of one silicon rod and one Ge2Sb2Te5 (GST) rod pair. Utilizing the transition from an amorphous state to a crystalline state of GST, such MS can produce an electromagnetically induced transparency (EIT) analogue with active control. Based on this, we realize all-optical switching at 1770 nm with a modulation depth of 84%.
A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage
A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between -3 V ~ 3 V) and high off-state breakdown voltage (620 V @ Vg = -10 V) simultaneously.
Efficiency improved by monolithic integration of HEMT with vertical-structure LED and Mg doping on dry etched GaN
Efficiency improved by monolithic integration of HEMT with vertical-structure LED and Mg doping on dry etched GaN Efficiency is essential to an integrated lighting system, monolithic integration of AlGaN/GaN high electron mobility transistors (HEMTs) with vertical-structure InGaN/GaN light emitting diodes (LEDs) was reported. An Mg-doping process was investigated to reduce the interconnection resistance.
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