We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission, we find an effective mass of , which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound.