The effect of pressure on the low-temperature states of the Re3Ge7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature-dependent resistance of Re3Ge7 behaves quasilinearly from room temperature down to 60 K, then undergoes a two-step metal-to-insulator transition (MIT) at temperatures T1=59.4K and T2=58.7K, which may be related to a structural phase transition or occurrence of charge-density wave ordering.