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Articles by Elena Blundo
Quantum sensing with spin defects in boron nitride nanotubes - Nature Communications
Abstract Spin defects in semiconductors are widely investigated for various applications in quantum sensing. Conventional host materials such as diamond and hexagonal boron nitride (hBN) provide bulk or low-dimensional platforms for optically addressable spin systems, but often lack the structural properties needed for chemical sensing.
Bandgap Engineering On Demand in GaAsN Nanowires by Post‐Growth Hydrogen Implantation
1 Introduction III-V semiconductor nanowires (NWs) have a variety of applications for optoelectronic devices, including solar cells with enhanced light absorption,[1, 2] photodetectors,[3] quantum[4, 5] and classical light sources.[6-8] The waveguiding properties of NWs allow to optimize the geometry to maximize absorption at desired wavelengths, or to achieve highly efficient photon emission and extraction properties.[1, 9, 10] Ga(In)AsN NWs are particularly interesting for photonic...
Bandgap Engineering On Demand in GaAsN Nanowires by Post‐Growth Hydrogen Implantation
1 Introduction III-V semiconductor nanowires (NWs) have a variety of applications for optoelectronic devices, including solar cells with enhanced light absorption,[1, 2] photodetectors,[3] quantum[4, 5] and classical light sources.[6-8] The waveguiding properties of NWs allow to optimize the geometry to maximize absorption at desired wavelengths, or to achieve highly efficient photon emission and extraction properties.[1, 9, 10] Ga(In)AsN NWs are particularly interesting for photonic...
Polarons shape the interlayer exciton emission of MoSe2/WSe2 heterobilayers - Nature Communications
Abstract We present evidence for the strong participation of hot phonons in the photo-physics of interlayer excitons (IXs) in 2H − and 3R − stacked MoSe2/WSe2 heterobilayers. Photoluminescence (PL) excitation spectroscopy reveals that excess energy associated with relaxation of intra-layer excitons towards IXs profoundly shapes the overall IX-PL lineshape, while the energy of the spectrally narrow discrete emission lines conventionally associated with trapped moiré IXs remain unaffected.
Localisation-to-delocalisation transition of moiré excitons in WSe2/MoSe2 heterostructures - Nature Communications
Abstract Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, e.g., for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures.
Fine-Tuning of the Excitonic Response in Monolayer WS2 Domes via Coupled Pressure and Strain Variation
Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2024, XXXX, XXX Terms & Conditions Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses).
Spectromicroscopy Study of Induced Defects in Ion-Bombarded Highly Aligned Carbon Nanotubes
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Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain.
Exciton-Phonon Interactions in Strained Domes of Monolayer MoS2 Studied by Resonance Raman Spectroscopy
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