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Abstract The microwave probed photoconductivity (MW-PC), differential absorption (DA) and light induced transient grating (LITG) techniques have been combined to examine carrier recombination and trapping characteristics in intrinsic GaN epi-layers, grown on Ammono substrates before and after neutron irradiation. Carrier lifetime has been examined over a wide interval of carrier injection levels, from low to extremely high, and over a wide range of reactor neutron irradiation fluences.
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