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Abstract Nanoscale detection and control of the magnetic order underpins a spectrum of condensed-matter research and device functionalities involving magnetism. The key principle involved is the breaking of time-reversal symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net magnetization limits device scalability and compatibility with phases, such as superconductors and topological insulators.
Abstract Large changes in the magnetization of ferromagnetic films can be electrically driven by non-180° ferroelectric domain switching in underlying substrates, but the shear components of the strains that mediate these magnetoelectric effects have not been considered so far. Here we reveal the presence of these shear strains in a polycrystalline film of Ni on a 0.68Pb(Mg1/3Nb2/3)O3–0.32PbTiO3 substrate in the pseudo-cubic (011)pc orientation.
For this experiment a 30-unit-cell-thick NdNiO (001) epitaxial film was grown on a NdGaO substrate. The epitaxial strain imposed by the substrate sets the transition temperature for the MIT and the width of the hysteresis loop17. As shown in the atomic force microscopy image and related line profile in Fig. 1a,b, the film presents an atomically flat surface with steps and terraces that mimic the underlying substrate. Figure 1c shows a ??2?
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