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F. Murphy-Armando

As seen in: Physical Review B
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Articles by F. Murphy-Armando

Quantum spin Hall phase in GeSn heterostructures on silicon

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By Università di Milano-Bicocca, F. Marcantonio, F. Murphy-Armando, B. M. Ferrari
| Physical Review B
Abstract Quantum phases of solid-state electron systems can sustain exotic phenomena and a very rich spin physics. We utilize model-solid theory to show that Ge1−xSnx alloys, an emerging group IV semiconductor, can be engineered into heterostructures that demonstrate a broken-gap alignment. Furthermore, the eight-band k·p method is used to disclose a quantum spin Hall phase in heterojunctions that accommodates the existence of gate-controlled chiral edge states.
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Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium

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By M.B. Clavel, Advanced Fiber Devices, F. Murphy-Armando, Lee Maltings
| Physical Review B
Abstract As forward-looking electron devices increasingly adopt high-mobility low-band-gap materials, such as germanium (Ge), questions remain regarding the feasibility of strain engineering in low-band-gap systems. Particularly, the Ge L-Γ valley separation (∼150 meV) can be overcome by introducing a high degree of tensile strain (ε ≥ 1.5%). It is therefore essential to understand the nature of highly strained Ge transport, wherein multivalley electron conduction becomes a possibility.
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