Is this you? As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.
Claim your profile
Article Dans Une Revue Nanoscale Année : 2025 Strain and doping transfer between suspended and supported bilayer graphene Domaines Origine Publication financée par une institution Licence hal-05046254 , version 1 (25-04-2025) Riccardo Galafassi, Fabien Vialla, V. Rajaji, Alexis Forestier, Bruno Sousa Araújo, et al.. Strain and doping transfer between suspended and supported bilayer graphene. Nanoscale, 2025, ⟨10.1039/D4NR05331A⟩.
The science and applications of electronics and optoelectronics have been driven for decades by progress in the growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions.
Figure 1b, c presents a schematic and optical micrograph of our lateral p–n junction device made by assembling exfoliated flakes on metallic split gates (V and V ) separated by 200 nm (see “Methods”). Few-layer graphite flakes placed on both ends of a monolayer WSe flake serve as ambipolar electrical contacts33 that we use to apply a bias voltage V and collect the photogenerated charges.
As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.
