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No Access Appl. Phys. Lett. 121, 064001 (2022); https://doi.org/10.1063/5.0104950 A merged-element transmon (MET) device based on silicon (Si) fins is proposed, and the first steps to form such a “FinMET” are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on parallel sidewall surfaces.
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