For the first time, Tb3+ and Eu3+ co-doped AlN films were prepared using ion implantation, and the crystal structure and cathodoluminescence properties of films were investigated. Raman scattering and X-ray diffraction show that high-dose Tb3+ implantation leads to an increase in internal compressive stress. The nonradiative resonant energy transfer was suggested between the Tb3+ and defects in the AlN host. The energy transfer mechanism between Tb3+ and Eu3+ in AlN films was dicussed.
