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Transport properties of indium-alloyed and indium telluride nanostructured bismuth telluride† Nanostructured thermoelectric materials ideally reduce lattice thermal conductivity without harming the electrical properties. Thus, to truly improve the thermoelectric performance, the quality factor, which is proportional to the weighted mobility divided by the lattice thermal conductivity of the material, must be improved.
Enhanced thermoelectric transport properties of n-type InSe due to emergence of the flat band by Si doping Post-transition-metal chalcogenides, such as SnSe, SnSe2, In4Se3, and In2Se3, have attracted renewed attention as promising thermoelectric materials mainly due to their inherent low lattice thermal conductivities, originated from the atomically layered structure.
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