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Articles by I-Te Lu
Publisher Correction: Quantum control of Hubbard excitons
Correction to: Nature Materials https://doi.org/10.1038/s41563-026-02517-6, published online 9 March 2026.
Multiple photon field–induced topological states in bulk HgTe
Abstract INTRODUCTION RESULTS DISCUSSION MATERIALS AND METHODS Acknowledgments Supplementary Materials REFERENCES Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract Strong light-matter interactions can be exploited to modify properties of quantum materials both in and out of thermal equilibrium.
Quantum control of Hubbard excitons - Nature Materials
Abstract Quantum control of the many-body wavefunction is a central challenge in quantum materials research, as it could yield a precise control knob to manipulate emergent phenomena. Floquet engineering, the coherent dressing of quantum states with periodic non-resonant optical fields, has become an important strategy for quantum control.
Time-based Chern number in periodically driven systems in the adiabatic limit
Abstract To define the topology of driven systems, recent works have proposed synthetic dimensions as a way to uncover the underlying parameter space of topological invariants. Using time as a synthetic dimension, together with a momentum dimension, gives access to a synthetic two-dimensional (2D) Chern number. It is, however, still unclear how the synthetic 2D Chern number is related to the Chern number that is defined from a parametric variable that evolves with time.
Ab initio electron-defect interactions using Wannier functions
Abstract Computing electron–defect (e–d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e–d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation and the approach can significantly speed up calculations of e–d relaxation times and defect-limited charge transport.
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