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High crystal quality and purity Cu2O by consecutive in situ annealing and thermal oxidation of Cu under H2 and O2 at elevated temperatures† Cu2O has been obtained via the thermal oxidation of Cu foils with a maximum thickness of 120 μm under Ar and O2 at 1020 °C for 30 min. Care was taken to suppress the oxidation of Cu during the temperature ramp by using H2 prior to admitting O2 at 1020 °C.
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