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Jiaolin Cui

As seen in: Royal Society of Chemistry, Chemistry World
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Articles by Jiaolin Cui

N-type thermoelectric Ag8SnSe6 with extremely low lattice thermal conductivity by replacing Ag with Cu

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By Yong Luo, Xie Li, Jiaolin Cui
| Royal Society of Chemistry Verified
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Significantly improved thermal stability and thermoelectric performance of Cu-deficient Cu4-δGa4Te8 (δ=1.12) chalcogenide through an addition of Sb

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By Jiaolin Cui, Junhao Zhu, Zhong-Kang Han, Yong Luo
| Royal Society of Chemistry Verified
Our previous work demonstrated that the ternary Cu18Ga25Te50 compound is a good thermoelectric candidate. However, its thermal stability is unsatisfactory, which suppresses the improvement of thermoelectric performance at high temperatures. In this work, we have tuned the chemical compositions through the addition of Sb to Cu-deficient Cu4-δGa4Te8 (δ=1.12) compound.
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The role of excess Sn in Cu4Sn7S16 for the modification in band structures and reduction in lattice thermal conductivity

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By Zheng-Liang Du, Yimin Chao, Jiaolin Cui, Tongtong He
| Royal Society of Chemistry Verified
In this work we have investigated the band structures of ternary Cu4Sn7+xS16 (x=0~1.0) compounds with an excess of Sn, and examined their thermoelectric (TE) properties.
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Engineering the energy gap near the valence band edge in Mn-incorporated Cu3Ga5Te9 for an enhanced thermoelectric performance

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By Zheng Sun, Jiaolin Cui, Zheng-Liang Du, Yimin Chao
| Chemistry World Verified
Cu3Ga5Te9-based compounds Cu3-xGa5MnxTe9 (x=0-0.2) with Mn substitution for Cu have been synthesized. The engineered energy gap (∆EA) between impurity and valence band is reduced from 44.4 meV at x=0 to 25.7 meV at x=0.1, which is directly responsible for the reduction of potential barrier for thermal excitation of carriers and enhancement in carrier concentration. However, the Seebeck coefficient shows an increasing tendency with the increasing of determined Hall carrier concentration (n).
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