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Articles by Jongtae Ahn
Polarization-sensitive in-sensor computing in chiral organic integrated 2D p-n heterostructures for mixed-multimodal image processing - Nature Communications
Abstract Sensor-based computing minimizes latency and energy consumption by processing data at the capture point, thereby eliminating extensive data transfer and enabling real-time decision-making. Here, we present a breakthrough in in-sensor computing via circularly polarized light detectors that integrate cholesteric liquid crystal reflectors with two-dimensional van der Waals p-n heterostructures.
Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices - Nature Electronics
Abstract Photodiodes based on two-dimensional semiconductors are of potential use in the development of optoelectronic devices, but their photovoltaic efficiency is limited by strong Fermi level pinning at metal–semiconductor contacts. Typical metal–interlayer–semiconductor contacts can address this issue, but can also lead to an increase in series resistance. Here we report a conductive-bridge interlayer contact that offers both Fermi level depinning and low resistance.
Negative Photoresponse Switching via Electron-Hole Recombination at The Type III Junction of MoTe2 Channel/SnS2 Top Layer
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description adma202304599-sup-0001-SuppMat.pdf1.3 MB Supporting Information References 1, , , , , , , , , , ACS Nano 2014, 8, 10743. 2, , , , , , , , , , Adv. Mater. 2019, 31, 1805656. 3, , , , , , , , , ACS Nano 2022, 16, 17347. 4, , , , , , , , , , Nat. Commun. 2017, 8, 1906. 5, , , , , , , , , , Adv. Mater. 2018, 30, 1703286. 6, , , , , , , , , Adv. Mater. Interfaces 2022, 9, 2201644. 7, , , , , , , , , Jpn. J.
Negative Photo‐Response Switching via Electron‐Hole Recombination at The Type Iii Junction of MoTe2 Channel/SnS2 Top Layer
Research Article This article has been accepted for publication and undergone full peer review but has not been through the copyediting, typesetting, pagination and proofreading process, which may lead to differences between this version and the Version of Record.
Integral imaging using a MoS2 Schottky diode
Sungwon Choi, Jongtae Ahn, Il-Ho Ahn, Do Kyung Hwang, and Min-Chul Park Author Information Author Affiliations Sungwon Choi,1,† Jongtae Ahn,1,† Il-Ho Ahn,2 Do Kyung Hwang,1,3,4 and Min-Chul Park1,5 1Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea 2Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea 3Division of Nano &...
All 2D WSe2/MoS2 heterojunction photodiode and its image sensor application
Abstract Two-dimensional (2D) layered van der Waals atomic crystals exhibit many fascinating properties. In particular, their dangling-bond-free nature enables different 2D materials to be stacked on the top of each other without restraint, thereby forming a heterostructure. In this study, a high-performance all 2D ${\rm WSe}_2/{\rm MoS}_2$ heterojunction photodiode with a graphene contact as an electrode is demonstrated.
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