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Conflicts of Interest Y.K. and Y. J. were the inventors of a granted patent (Patent No. KR-10-2255573). Y.K., J.K. and Y.J. are the inventors of granted patents (Patent Nos. US11843065B2, KR-10-2453973, KR-10-2371050, KR-10-2363048 and KR-10-2481858) and applications (Nos. US-17/887,028 and US-17/872,480). C.L., Y.K., K.C. and Y.J. are the inventors on granted patents (Patent Nos. KR-10-2596269 and KR-2704149) and an application (No. US-18/362,611).
3.2. Thermal Process Lee et al. developed a method for recovering intact Si wafers via thermal treatment. To achieve this, the modules were pre-treated using three methods: glass cracking, EVA patterning, or a combination of both. The pre-treated modules were subjected to heat treatment at 200, 250, and 300 °C, and the results were examined. EL imaging confirmed breakage in the cells, and the thermogravimetric analysis (TGA) showed thermal decomposition in the range of 25–550 °C.
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