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Abstract In this Letter, we describe the fabrication of three dimensional (3D) truncated-hexagonal-pyramid (THP) vertical light emitting diodes (VLEDs) with white emission grown on β-Ga2O3 substrate. In the 3D n-GaN layer, it is noted that the longitudinal growth rate of the 3D n-GaN layer increases as the flow rate of N2 decreases and H2 increases.
Abstract In this Letter, we describe an aperiodic-oscillation emission phenomenon originating from the Fabry–Perot effect in the deep-ultraviolet backscattering fluorescence spectrum of the $c$-plane AlGaN film, which is related to the dispersion of its ordinary refractive index near the band edge. Based on this fluorescence spectrum, the ordinary refractive index of the AlGaN film near the band edge could be directly obtained.
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