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M. Inglot

As seen in: Physical Review B
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Articles by M. Inglot

Localized states at the Rashba spin-orbit domain wall in magnetized graphene: Interplay of Rashba and magnetic domain walls

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By M. Inglot, Adam Mickiewicz, Polish Academy, V. K. Dugaev
| Physical Review B
It is well known that electronic states in graphene with a uniform Rashba spin-orbit interaction and uniform magnetization, e.g., due to exchange coupling to a magnetic substrate, display an energy gap around the Dirac K and K′ points. When the magnetization of graphene is nonuniform and forms a magnetic domain wall, electronic states localized at the wall emerge in the energy gap.
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Topological insulator and quantum memory

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By C. Jasiukiewicz, M. Inglot, M. Kulig, P. Kurashvili
| Physical Review B
Measurements performed on quantum systems are too specific. Unlike their classical counterparts, quantum measurements can be invasive and destroy the state of interest. Besides, quantumness limits the accuracy of measurements performed on quantum systems. Uncertainty relations define the universal accuracy limit of the quantum measurements. Relatively recently, it was discovered that quantum correlations and quantum memory might reduce the uncertainty of quantum measurements.
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Random spin-orbit gates in the system of a topological insulator and a quantum dot

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By S. Wolski, M. Inglot, C. Jasiukiewicz, K. A. Kouzakov
| Physical Review B
Abstract The spin-dependent scattering process in a system of a topological insulator and a quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged Rényi entropy.
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