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1. Introduction For decades of development, silicon-based MOSFET devices have reached their ability limits [1]. With the rapidly increased demands of power electronics, novel materials, such as GaN and SiC, are nowadays becoming more and more popular due to their capabilities of high power, temperature, frequency, and radiation tolerance [2,3,4]. GaN devices are widely considered to be excellent candidates for microwave use [5,6,7,8,9,,,,,].
Dielectric barrier discharge-accelerated one-pot synthesis of sulfur quantum dots for fluorescent sensing of lead ions and L-cysteine Manlin Yang, Chenghui Li, Yunfei Tian, Lan Wu, Jing Hu and Xiandeng Hou Abstract Here, we report a novel method for the one-pot facile synthesis of sulfur quantum dots (SQDs) based on a dielectric barrier discharge (DBD)-accelerated H2O2 etching strategy within merely 20 min.
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