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Impact of carrier diffusion on internal quantum efficiency of InGaN quantum well structures Kazimieras Nomeika, Žydrūnas Podlipskas, Mariamija Nikitina, Saulius nargelas, Gintautas Tamulaitis and Ramunas Aleksiejunas Abstract Internal quantum efficiency (IQE) is studied in a large set of polar and non-polar InGaN/GaN quantum well structures, 57 samples in total.
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