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Industrial drives have a long history in power electronics. In recent years, drive manufacturers have put a stronger focus on enhancing power density and efficiency. With CoolSiC™ MOSFET technology, Infineon provides a solution to such requirements. A technical comparison is presented between silicon-based IGBT7 TRENCHSTOP™ technology, optimized for general-purpose drive applications, and CoolSiC™ MOSFET technology.
Skip to content This presentation from our PowerUp 2023 Virtual Conference focuses on how CoolSiC MOSFETs can boost industrial drive performance We use cookies on our website to give you the most relevant experience by remembering your preferences and repeat visits. By clicking “Accept All”, you consent to the use of ALL the cookies. However, you may visit "Cookie Settings" to provide a controlled consent.
Beim Einschalten eines IGBTs ist der dvCE/dt-Wert bei niedrigen Temperaturen und geringen Strömen normalerweise höher. Das bedeutet, dass der Wert des Gate-Widerstands zu erhöhen ist, wenn der dvCE/dt-Wert begrenzt werden soll. Derartige Begrenzungen von dvCE/dt sind insbesondere bei Motorantrieben üblich, bei denen der Motorstrom auch Nulldurchgänge aufweist.
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