I. INTRODUCTION In the last few years, HfO2 and related compounds attracted considerable interest as high-k gate insulators for advanced nanometer-scaled field effect transistors1,21. H. H. Radamson, H. Zhu, Z. Wu, X. He, H. Lin, J. Liu, J. Xiang, Z. Kong, W. Xiong, J. Li, H. Cui, J. Gao, H. Yang, Y. Du, B. Xu, B. Li, X. Zhao, J. Yu, Y. Dong, and G. Wang, “State of the art and future perspectives in advanced CMOS technology,” Nanomaterials 10, 1555 (2020). https://doi.org/10.3390/nano100815552. M. S. Narula and A.
