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Abstract : A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO2 is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the source side of the channel. Physical and electrical characteristics of the proposed device are compared with conventional double gate Schottky barrier MOSFET.
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