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Articles by Ping-Ping Chen
Efficacy of linaclotide in combination with polyethylene glycol for bowel preparation in Chinese patients undergoing colonoscopy polypectomy: protocol for a randomised controlled trial
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The roles of Bi in InAs and InAsBi nanostructure growth
The roles of Bi in InAs and InAsBi nanostructure growth Incorporation of bismuth (Bi) into the III–V semiconductors expands the bandgap towards the mid-infrared range by bandgap bowing and spin-orbit splitting, providing new opportunities and functionalities in optoelectronic applications.
Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering
Abstract GaAs-based semiconductors are highly attractive for diverse nonlinear photonic applications, owing to their non-centrosymmetric crystal structure and huge nonlinear optical coefficients. Nanostructured semiconductors, for example, nanowires (NWs), offer rich possibilities to tailor nonlinear optical properties and further enhance photonic device performance.
Crystal-phase control of GaAs-GaAsSb core-shell/axial nanowire heterostructures by a two-step growth
The growth of III-Sb nanowires with controlled wurtzite and zinc-blende structures is essential for tailoring their fundamental properties and in turn potential applications. However, most studies of III-Sb nanowires showed that they adopt the zinc-blende structure, so that the growth of wurtzite structured III-Sb nanowires needs to be explored.
Phase Purification of GaAs Nanowires by Prolonging Growth Duration in MBE
In this study, we demonstrated that by merely prolonging the growth duration, the growth behavior and phase purity of GaAs nanowires can be manipulated in molecular beam epitaxy.
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