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Abstract The microwave probed photoconductivity (MW-PC), differential absorption (DA) and light induced transient grating (LITG) techniques have been combined to examine carrier recombination and trapping characteristics in intrinsic GaN epi-layers, grown on Ammono substrates before and after neutron irradiation. Carrier lifetime has been examined over a wide interval of carrier injection levels, from low to extremely high, and over a wide range of reactor neutron irradiation fluences.
Laimonas Deveikis Margarita Biveinytė Tomas Čeponis Eugenijus Gaubas Vytautas Rumbauskas Kęstutis Žilinskas Keywords: low-gain avalanche detectors, radiation-induced defects, recombination lifetime, spectroscopy of defects Abstract Silicon-based particle sensors are widely employed in high-energy and nuclear physics experiments conducted at the European Organization for Nuclear Research (CERN). In recent years, silicon sensors with internal gain, known as low gain avalanche detectors (LGADs),...
This is an early access version, the complete PDF, HTML, and XML versions will be available soon. Open AccessArticle by *, , , and Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania * Author to whom correspondence should be addressed.
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