Is this you? As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.
Claim your profile
As solid-state device architectures become increasingly complex, buried interfaces play a critical role in determining thin-film texture, morphology, and defect formation. However, resolving the structural features that control growth on nominally amorphous interlayers remains challenging because it requires three-dimensional sensitivity at high spatial resolution.
Ferroelectric field-effect transistors (FeFETs) utilizing either a ferroelectric dielectric (FeD) or a ferroelectric semiconductor (FeS) are highly promising for neuromorphic computing. While integrating FeD with emerging FeS could provide new degrees of freedom for synaptic plasticity, direct integration inevitably suffers from unintended electrostatic coupling and a lack of independent polarization control.
As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.
