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A two-terminal binary HfO2 resistance switching random access memory for an artificial synaptic device† Xiaozhang Chen, ‡a You Lv,‡a Zhaobo Tian, ‡a Jingxi Yang,a Yuan Zhu*ab and Longxing Su *a Abstract In this study, we developed an artificial synaptic device based on the HfO2 nanocrystals synthesized using a simple hydrothermal method.
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