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Articles by Yaoju Tarn
Reducing the Strain Required for Ambient‐Pressure Superconductivity in Ruddlesden‐Popper Bilayer Nickelates
Conflicts of Interest The authors declare no conflicts of interest. Data Availability Statement The data that support the findings of this study are available from the corresponding author upon reasonable request. Supporting Information Filename Description adma72548-sup-0001-SuppMat.docx2.8 MB Supporting File 1: adma72548-sup-0001-SuppMat.docx. adma72548-sup-0002-FigureS1-S11.zip3.1 MB Supporting File 2: adma72548-sup-0002-FigureS1-S11.zip.
Author Correction: Superconductivity and normal-state transport in compressively strained La2PrNi2O7 thin films - Nature Materials
Correction to: Nature Materials https://doi.org/10.1038/s41563-025-02258-y, published online 29 May 2025. In the version of this article originally published, the Hall coefficient of La2PrNi2O7 samples (P75, P78, P108) was reported with the wrong sign in Fig. 4b and Extended Data Fig. 8. This has now been corrected; the La3Ni2O7 data from ref. 9 have been checked again and are unaffected. The original Fig. 4 and Extended Data Fig.
Superconductivity and normal-state transport in compressively strained La2PrNi2O7 thin films - Nature Materials
Abstract The discovery of superconductivity under high pressure in Ruddlesden–Popper phases of bulk nickelates has sparked great interest in stabilizing ambient-pressure superconductivity in the thin-film form using epitaxial strain. Recently, signs of superconductivity have been observed in compressively strained bilayer nickelate thin films with an onset temperature exceeding 40 K, although with broad, two-step-like transitions.
Toward Phonon-Limited Transport in Two-Dimensional Transition Metal Dichalcogenides by Oxygen-Free Fabrication
Introduction Click to copy section linkSection link copied! Silicon complementary metal-oxide-semiconductor (CMOS) technology has been pivotal in the progress of modern electronics. Advances in nanofabrication techniques have enabled continued scaling of CMOS transistor technology. (1) Meeting the growing demand for cheaper, faster, and more energy-efficient electronics will require the ultimate scaling of the semiconductor channel thickness toward the sub-nanometre regime.
Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots
RETURN TO ARTICLES ASAPPREVSurfaces, Interfaces...Surfaces, Interfaces, and ApplicationsNEXT Teymour Talha-Dean Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, U.K. , Yaoju Tarn Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and...
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