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Yuri Choe

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Articles by Yuri Choe

Effect of Vapor Phase Infiltration on Mechanical and Chemical Properties of Polyethersulfone Membranes

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By Yuri Choe, Alyssa Hicks, Seancarlos Gonzalez, David S Bergsman
| ACS Publications
Abstract Click to copy section linkSection link copied! The incorporation of metal oxides into polymer membranes via vapor phase infiltration (VPI) can alter their chemical stability and mechanical properties. Here, we show how key VPI process parameters, such as reactant exposure times and process cycles, can affect the infiltration depth and loading of inorganic reactants within polymers, influencing the extent of these alterations.
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Effect of Vapor Phase Infiltration on Mechanical and Chemical Properties of Polyethersulfone Membranes

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By Yuri Choe, Alyssa Hicks, Seancarlos Gonzalez, David S Bergsman
| dx.doi.org
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Vapor Phase Infiltration for Membrane Modification

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By Seancarlos Gonzalez, Yuri Choe, Prasi Desai, Bezawit A. Getachew
| ACS Publications
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Vapor Phase Infiltration for Membrane Modification

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By Yuri Choe, Prasi Desai, Bezawit A. Getachew, Seancarlos Gonzalez
| ACS Publications
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Investigation of arc spot splitting behavior on aluminum, titanium, and their alloy cathodes under different gas flows

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By Guangzhou Maritime, Wenzhou Polytechnic, Romel Hidayat, Yuri Choe
| American Institute of Physics
This paper presents an experimental study on the spot splitting behavior of aluminum, titanium, and their alloy cathodes during electric arc discharge. Utilizing high-speed digital cameras, we dynamically captured the splitting motion of cathode arc spots and analyzed their behavior under different pressures of argon, nitrogen, and oxygen. The study also examined the effects of pulsed arc current parameters on spot splitting.
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Effect of deformation temperature on the microstructure and texture evolution of Ti-6Al-4Zr-2Mo-6V alloy

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By Romel Hidayat, Yuri Choe, Hanan Alexandra Hsain
| American Institute of Physics
In this work, the effect of deformation temperature on the microstructure, texture, and tensile properties of a Ti-6Al-4Zr-2Mo-6V (wt. %) alloy was systematically investigated. The whole samples were composed of an equiaxed α phase, a strip α phase, and a β transformed microstructure. The recrystallization area fraction increased with the increase of deformation temperature. The orientation distribution of a retained β phase was {001} ⟨110⟩ texture regardless of deformation temperature.
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Ambient pressure x-ray photoelectron spectroscopy study on the initial atomic layer deposition process of platinum

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By Max IV Laboratory, Romel Hidayat, Yuri Choe
| American Institute of Physics
Topics Measuring instruments, Materials analysis, Atomic layer deposition, Surface analysis techniques, X-ray photoelectron spectroscopy, Synchrotrons, Ligand exchange, Reaction mechanisms Atomic layer deposition (ALD) of ultrathin noble metal films is an increasingly useful technique for several fields due to the films’ catalytic properties,1,2 chemical stability, low propensity for oxidation, and numerous gas sensing applications.3–8 Creating such films using ALD is very useful as the...
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Reevaluation of XPS Pt 4f peak fitting: Ti 3s plasmon peak interference and Pt metallic peak asymmetry in Pt@TiO2 system

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By Romel Hidayat, Yuri Choe, Hanan Alexandra Hsain
| American Institute of Physics
Topics Plasmons, X-ray photoelectron spectroscopy, Nanoparticle, Catalysts and Catalysis Noble metals (e.g., Pt, Au, and Pd) supported on transition metal oxides [Fig.
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Synthesis of group-IV ternary and binary semiconductors using epitaxy of GeH3Cl and SnH4

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By Romel Hidayat, Hanan Alexandra Hsain, Yuri Choe, J. Tolle
| American Institute of Physics
Citation Aixin ZhangDhruve A. RingwalaMatthew A. MircovichManuel A. RoldanJohn KouvetakisJosé Menéndez; Synthesis of group-IV ternary and binary semiconductors using epitaxy of GeH3Cl and SnH4. J. Vac. Sci. Technol. A 1 December 2024; 42 (6): 062704. https://doi.org/10.1116/6.0003991 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex
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Cr2O3-NiO mixed oxides thin films for p-type transparent conductive electrodes

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By Romel Hidayat, Hanan Alexandra Hsain, Yuri Choe
| American Institute of Physics
Citation Aleksei AlmaevBogdan KushnarevPetr KorusenkoPavel ButenkoViktor KopyevAleksandra KorolevaAndrei ChikiryakaEvgeniy Zhizhin; Cr2O3–NiO mixed oxides thin films for p-type transparent conductive electrodes. J. Vac. Sci. Technol. A 1 December 2024; 42 (6): 063406. https://doi.org/10.1116/6.0003956 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex
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Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2 and SF6/Ar plasmas

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By Romel Hidayat, Hanan Alexandra Hsain, A. Hossain, Yuri Choe
| American Institute of Physics
Citation Ivy I. ChenJennifer SolgaardRyoto SekineAzmain A. HossainAnthony ArdizziDavid S. CatherallAlireza MarandiJames R. RenzasFrank GreerAustin J. Minnich; Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H2 and SF6/Ar plasmas. J. Vac. Sci. Technol. A 1 December 2024; 42 (6): 062603. https://doi.org/10.1116/6.0003962 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex
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