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A new spin for oxide interfaces
1.Hwang, H. Y. et al. Nat. Mater. 11, 103–113 (2012).2.Santander-Syro, A. F. et al. Nature 469, 189–193 (2011).3.Ohtomo, A. & Hwang, H. Y. Nature 427, 423–426 (2004).4.Manchon, A., Koo, H. C., Nitta, J., Frolov, S. M. & Duine, R. A. Nat. Mater. 14, 871–882 (2015).5.Edelstein, V. M. M. Solid State Commun. 73, 233–235 (1990).6.Manipatruni, S., Nikonov, D. E., Ramesh, R., Li, H. & Young, I. A. Preprint at https://arxiv.org/abs/1512.05428 (2015).7.Rojas-Sánchez, J. C. et al. Nat. Commun.
Quantifying the critical thickness of electron hybridization in spintronics materials
Thin films of LSMO (doping value x=0.33 and x=0.35, grown on LSAT(100) and SrTiO (100)) and of (Ga,Mn)As (Mn doping between 8 and 13%, grown on GaAs(100)) were measured. Figure 1 shows the Mn 2p core-level spectra measured for (Ga,Mn)As (panels a and b) and LSMO (panels f and g) epitaxial films, as a function of increasing photon energy, that is, with increasing probing depth20,21. The lattice structures are sketched in Fig.
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