Aarne Kasikov

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Optical properties of Ga2O3 thin films grown by atomic layer deposition using GaI3 and O3 as precursors Properties of Ga2O3 thin films grown by atomic layer deposition from GaI3 and O3 on Si(100) and amorphous SiO2 substrates were investigated. The Ga2O3 films deposited on the bare Si and SiO2 substrates at 450–550 °C contained the κ-Ga2O3 phase while it was not possible to exclude the presence of the ε-Ga2O3 phase in these films, either.