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Articles by Amun Jarzembski
Wide‐Field Bond Quality Evaluation Using Frequency Domain Thermoreflectance with Deep Neural Network Feature Reconstruction
1 Introduction In recent years, increasing heat loads in microelectronics[1] have driven innovative thermal design for improved heat dissipation.[2, 3] Often the pain point in thermal management originates at the interface between two differing materials,[4-6] particularly when the electronic devices are predominantly made of high thermal conductivity materials such as silicon.
Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices
Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Mater. Interfaces 2024, XXXX, XXX Terms & Conditions Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses).
Inversion for Thermal Properties with Frequency Domain Thermoreflectance
Heterogeneous integration (HI) of microelectronic devices allows for an electronic system to be realized by combining integrated circuits with different functions into a single chip. (1) Commonly, this integration occurs through the use of thermocompression bonding of metallic interconnects that can range from tens to hundreds of microns in diameter.
Temperature sensitivity of scattering-type near-field nanoscopic imaging in the visible range
Abstract Due to its superb imaging spatial resolution and spectroscopic viability, scattering-type scanning near-field optical microscopy (s-SNOM) has proven to be widely applicable for nanoscale surface imaging and characterization. However, limited works have investigated the sensitivity of the s-SNOM signal to sample temperature. This paper reports the sample temperature effect on the non-interferometric (self-homodyne) s-SNOM scheme at a visible wavelength (λ=638nm).
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