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Anhan Liu on Muck Rack

Anhan Liu

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Articles

Wafer-scale 2D MoS 2 transistors with self-aligned angstrom gate length and nanometer channel length

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By Ziming Wang, Fan Wu, Caifang Gao, Yizhe Guo, Ruifang Xue, Peigen Zhang, yanming Liu, Tao Deng, Tian-Ling Ren, He Tian, Anhan Liu, Hengbin Ding
| Nature Verified
Abstract As conventional silicon scaling approaches fundamental physical limits, two-dimensional semiconductors offer a promising pathway for continued transistor miniaturization. Here we show an ultra-scaled vertical MoS2 transistor that combines a sub-1 nm gate and a 10 nm channel length, realized through a dual-self-aligned fabrication strategy.
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