Arashdeep Singh Thind

Abstract Two major challenges hinder the advance of aqueous zinc metal batteries for sustainable stationary storage: (1) achieving predominant Zn-ion (de)intercalation at the oxide cathode by suppressing adventitious proton co-intercalation and dissolution, and (2) simultaneously overcoming Zn dendrite growth at the anode that triggers parasitic electrolyte reactions.

We demonstrate the atmospheric pressure chemical vapor deposition of methyl ammonium bismuth iodide ((CH NH ) Bi I or MA Bi I ) films. MA Bi I possesses an indirect optical bandgap of 1.80 eV and a room temperature excitonic peak at 511 nm. In contrast to recent reports, the films are n-type semiconductors with a room temperature carrier concentration of 3.36 x 10 cm and Hall mobility of 18 cm /V·s; values superior to solution-processed, undoped films.