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Artur Litvinov on Muck Rack

Artur Litvinov

As seen in: MDPI, ZDNet
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Articles

MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors

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By Artur Litvinov, Maya Etrekova, Boris Podlepetsky, Nikolay Samotaev
| MDPI
This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
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Structure and Technological Parameters’ Effect on MISFET-Based Hydrogen Sensors’ Characteristics

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By Boris Podlepetsky, Nikolay Samotaev, Maya Etrekova, Artur Litvinov
| MDPI
Abstract : The influence of structure and technological parameters (STPs) on the metrological characteristics of hydrogen sensors based on MISFETs has been investigated. Compact electrophysical and electrical models connecting the drain current, the voltage between the drain and the source and the voltage between the gate and the substrate with the technological parameters of the n-channel MISFET as a sensitive element of the hydrogen sensor are proposed in a general form.
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