Asir Intisar Khan on Muck Rack

Asir Intisar Khan

As seen in: Nature, Wiley Online Library, Science Magazine
Is this you? As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work. Claim your profile

Get in touch with Asir Intisar

Contact Asir Intisar, search articles and posts on X, monitor coverage, and track replies from one place.

Learn more about Muck Rack

Actions

Share this page

Is this you?

As a journalist, you can create a free Muck Rack account to customize your profile, list your contact preferences, and upload a portfolio of your best work.
Claim your profile

Articles

Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

|
By Daisy Hoagland, Laura Digiovanni, Hsiu-Chuan Lin, Asir Intisar Khan
| Science Magazine Verified
Abstract For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and thereby the current that can be achieved. However, the Schottky-gate also leads to very high leakage current through the gate electrode.
Open in Who Shared Issue with article?

Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal

|
By Asir Intisar Khan, Akash Ramdas, Hyun-Mi Kim, Krishna Saraswat, Ching-Tzu Chen, Yuri Suzuki, Il-Kwon Oh, Eric Pop, Emily Lindgren, Byoungjun Won, Xiangjin Wu
| Science Magazine Verified
Acknowledgments We dedicate this work in memory of the late Prof. A. K. M. Newaz (San Francisco State University) and Prof. E. Reed (Stanford University). We are grateful for discussions with them throughout the years and for their contribution to the scientific community. We also acknowledge Prof. H.-S. P. Wong for discussions and encouragement related to this work. A.I.K. is thankful to J. McVittie and C. Kline for their support and discussion regarding materials deposition, to S.
Open in Who Shared Issue with article?

Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures

|
By Maliha Noshin, Heungdong Kwon, Asir Intisar Khan, Sauviz P. Alaei
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description adfm202403474-sup-0001-SuppMat.pdf564.8 KB Supporting Information References 1, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , et al., Adv. Electron. Mater. 2018, 4, 1600501. 2, , , , , , , , ECS J. Solid State Sci. Technol. 2017, 6, 3061. 3, , , , , , , J. Phys. Mater. 2024, 7, 022003. 4, , IEEE Trans. Electron Dev. 1994, 41, 1481. 5, , , , , , , , Appl. Phys. Lett. 2001, 79, 368. 6, J. Electron.
Open in Who Shared Issue with article?
See all 7 articles
 •  Privacy  •  Terms  •  Security and Legal  •   •   •   • 

© 2026 Muck Rack

SOC 2® Certified