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High Energy Storage Density and Efficiency of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Films on Platinized Sapphire Substrates
High Energy Storage Density and Efficiency of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Films on Platinized Sapphire Substrates Manganese-doped 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT–BCT) ferroelectric thin films deposited on platinized sapphire substrates by chemical solution deposition and multistep-annealed at 850 °C, are investigated. The 100 nm and 340 nm thick films are crack-free and have columnar microstructures with average lateral grain sizes of 58 nm and 92 nm, respectively.
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