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Barry Arkles on Muck Rack

Barry Arkles

As seen in: MDPI, The Astronomical Journal
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Articles

A New Paradigm for Semiconductor Manufacturing: Integrated Synthesis, Delivery, and Consumption of Source Chemicals for IC Fabrication

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By Barry Arkles, Alain E. Kaloyeros
| MDPI
All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.
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Review-Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques - IOPscience

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By Alain E. Kaloyeros, Barry Arkles
| The Astronomical Journal Verified
Silicon carbide (SiCx) thin films, primarily stoichiometric (x ∼ 1) and non-stoichiometric (Si-rich, x < 1 and C-rich, x > 1), continue to be the subject of significant research and development (R&D) and manufacturing initiatives in a continuously growing field of innovative commercial applications. 1–5 The intense R&D and manufacturing interest in SiCx also extends to various forms of the Si-C-N material system.
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Review-Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

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By Alain E. Kaloyeros, Youlin Pan, Jonathan Goff, Barry Arkles
| The Astronomical Journal Verified
Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies.
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