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Barsha Jain

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Articles

High-efficiency InGaN blue LEDs with reduced positive sheet polarization

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By Barsha Jain, Fatemeh Mohammadi Shakiba, Hoang-Duy Nguyen, Moulik Patel
| optica.org
Abstract The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional $p$-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB.
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Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes

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By Barsha Jain, Ravi Teja Velpula, Moulik Patel
| osapublishing.org
Abstract Electron overflow from the active region confines the AlGaN deep-ultraviolet (UV) light-emitting diode (LED) performance. This paper proposes a novel approach to mitigate the electron leakage problem in AlGaN deep-UV LEDs using concave quantum barrier (QB) structures. The proposed QBs suppress the electron leakage by significantly reducing the electron mean free path that improves the electron capturing capability in the active region.
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High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

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By Barsha Jain, Hoang-Duy Nguyen, Ravi Teja Velpula, Swetha Velpula
| osapublishing.org
Abstract In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed.
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