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Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

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By O. Spitz, David Graves, Benet Laboratories, Gottlieb S. Oehrlein
| aip.org
Topics Optoelectronic devices, Crystallographic defects, Alloys, Ion implantation, Atomic force microscopy, Raman spectroscopy, Thin films, Transmission electron microscopy, Rutherford backscattering spectrometry, Chemical vapor deposition There has been considerable interest over the past two decades in producing, characterizing, and exploiting germanium-tin (GeSn) alloys for optoelectronic applications.
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