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Binzhou Ying on Muck Rack

Binzhou Ying

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Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection

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By Zhixiang Hu, Licheng Zhou, Long Li, Binzhou Ying
| MDPI
Font Type: Arial Georgia Verdana Line Spacing:    Column Width:    Open AccessArticle by 1, 1, 1, 1, 1, 1, 1, 2,3,* and 1,* 1 School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, China 2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 College of Materials Science and Opto-Electronic...
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