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Byberg J.R

As seen in: Cell Reports Physical Science
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Articles

Atomic structure of defect responsible for light-induced efficiency loss in silicon solar cells in warmer climates

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By Abigail Meyer, P. Craig Taylor, Byberg J.R, Vincenzo LaSalvia
| Cell Reports Physical Science Verified
Figure 2C shows the EPR spectra of the Ga-doped Cz Si sample in the as-passivated, partially degraded, fully degraded, temporarily recovered metastable, and regenerated states of LeTID. The as-passivated sample shows an EPR signature at g = 2.006. We observe that this feature increases in intensity with the extent of LeTID and maximizes in the fully degraded state.
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